ROOT / SILICON // LEADING-EDGE FABS
// Silicon · decoded · deep-research pass

Leading-Edge Fabs, decoded.

Every fab pushing the process frontier, node and capacity deep.

CURATED INDEX◊ confidence: High
2 nm
leading node
120k
top capacity
40
most EUV
4
countries
// the signal · what the data says
Leading-edge logic is a near-monopoly: TSMC makes essentially all frontier AI silicon, with Samsung a distant second and Intel Foundry trying to re-enter at 18A/14A. The bottleneck is EUV tool count (all from ASML) and, at 2nm and below, High-NA EUV. Fab siting is now a geopolitical instrument (US CHIPS Act, Arizona, Japan, Germany).
// comparison · every entry, benchmarked & annotated
NameMakerNode (nm)Capacity (kwpm)EUV toolsCountry
GigaFab (Hsinchu/Tainan)TSMC212040Taiwan
◊ N2 ramping 2025-26, backbone of AI silicon
Fab 21 (Arizona)TSMC35018USA
◊ N4/N3, N2 planned; CHIPS-funded
Kikuyo (Kumamoto)TSMC/JASM12556Japan
◊ 22/28 + 12/16 nm, Sony/Denso
Pyeongtaek P3Samsung38025Korea
◊ SF3/SF2 GAA
Fab 52 (Arizona)Intel24012USA
◊ 18A/14A, RibbonFET+PowerVia
Dresden ESMCTSMC/ESMC12400Germany
◊ Auto/industrial, DUV
// leaderboard · Node (nm)
01GigaFab (Hsinchu/Tainan)2
02Fab 52 (Arizona)2
03Fab 21 (Arizona)3
04Pyeongtaek P33
05Kikuyo (Kumamoto)12
06Dresden ESMC12
// sources & where to verify
// full index, per-field sourcing & CSV export   [ AUTHENTICATE → ]
◊ Deep-research pass, mid-2026. Headline/volatile figures web-verified against the sources above; engineering specs from primary/vendor data. Green = best value in column · confidence: High · verify volatile figures (prices, counts, live feeds) before publishing.
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